band switching diodes ba282, ba283 vishay semiconductors document number: 85526 for technical ques tions within your region, please cont act one of the following: www.vishay.com rev. 1.7, 16-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 mechanical data case: do-35 weight: approx. 125 mg cathode band color: black packaging codes/options: tr/10k per 13" reel (52 mm tape), 50k/box tap/10k per ammopack (52 mm tape), 50k/box features ? silicon planar diodes ? low dynamic forward resistance ? low diode capacitance ? high reverse impedance ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to iec 61249-2-21 definition applications ? band switching in vhf-tuners note (1) t amb = 25 c, unless otherwise specified note (1) t amb = 25 c, unless otherwise specified 94 9367 parts table part type differentiation ordering code type marking remarks ba282 r f at i f 3 ma = max. 0.7 ba282-tr or ba282-tap ba282 tape and reel/ammopack ba283 r f at i f 3 ma = max. 1.2 ba283-tr or BA283-TAP ba283 tape and reel/ammopack absolute maximum ratings (1) parameter test conditions symbol value unit reverse voltage v r 35 v forward continuous current i f 100 ma thermal characteristics (1) parameter test condition symbol value unit thermal resistance junction to ambient air l = 4 mm, t l = constant r thja 350 k/w junction temperature t j 150 c storage temperature range t stg - 55 to + 150 c
ba282, ba283 vishay semiconductors band switching diodes document number: 85526 for technical questi ons within your region, please contact one of th e following: www.vishay.com rev. 1.7, 16-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 2 note (1) t amb = 25 c, unless otherwise specified typical characteristics t amb = 25 c, unless otherwise specified fig. 1 - dynamic forward resistance vs. forward current fig. 2 - diode capacitance vs. reverse voltage package dimensions in millimeters (inches): do-35 electrical characteristics (1) parameter test condition part symbol min. typ. max. unit forward voltage i f = 100 ma v f 1000 mv reverse current v r = 20 v i r 50 na diode capacitance f = 100 mhz, v r = 1 v c d 1.5 pf f = 100 mhz, v r = 3 v ba282 c d 1.25 pf ba283 c d 1.2 pf dynamic forward resistance f = 200 mhz, i f = 3 ma ba282 r f 0.7 ba283 r f 1.2 f = 200 mhz, i f = 10 ma ba282 r f 0.5 ba283 r f 0.9 reverse impedance f = 100 mhz, v r = 1 v z r 100 k 0.1 1 10 0.1 1 10 100 r f - differential for w ard resistance ( ) i f - for w ard c u rrent (ma) 100 94 9072 ba2 8 2 ba2 8 3 f = 200 mhz t j = 25 c 0.1 1 10 0 0.5 1.0 1.5 2.0 3.0 c d - diode capacitance (pf) 100 94 9073 2.5 v r - re v erse v oltage ( v ) t j = 25 c f = 200 mhz ba2 8 3 ba2 8 2 94 9366 26 (1.024) min. 3.9 (0.154) max. 26 (1.024) min. 0.55. (0.022) max cathode identification 1.7 (0.067) 1.5 (0.059) re v . 6 - date: 29. jan u ary 2007 doc u ment no.: 6.560-5004.02-4
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